Tin oxide thin films were grown by chemical vapor deposition (CVD) on glass substrates at atmospheric pressure (AP) and different temperatures of 400, 500 and 600 °C. The deposition times were also altered from 15 to 60 minutes with 15 minutes time intervals to investigate the effect of deposition time. A horizontal home-made reactor was used for the deposition from SnCl2 precursors with flowing pure oxygen at a rate 5 ccpm. The structure was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) facilities to reveal the deposition mechanisms and crystalline structures. Energy-dispersive spectroscopy (EDS) was conducted to understand the elemental surface composition of the thin films produced. It was detected that the morphology and the oxide structure were changed with deposition time and temperature. The optical and electrical properties were also studied to reveal a relationship between physical properties and production parameters of the resultant thin films.

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