Plastic deformation of polysilicon at high temperatures under stress due to creep has been demonstrated at the micro scale. This type of material behavior is generally associated with mechanical failure, however it can also be used to permanently deform or position a device. In order for creep in polysilicon to be used for MEMS applications its mechanical properties must be investigated. In this work, an experimental micro test structure is developed and measurements of high temperature plastic deformation within polysilicon are conducted. Both increases in temperature and stress are shown to increase the creep rate within the studied beams in the region of interest of the test device. Immediate plastic deformation of polysilicon has been observed to start at approximately 63% of the absolute melting temperature under moderate stress.
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January 2005
Research Papers
A Study of Creep in Polysilicon MEMS Devices
A. Jungen,
A. Jungen
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
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A. Geisberger,
A. Geisberger
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
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M. Ellis,
M. Ellis
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
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G. Skidmore
G. Skidmore
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
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K. Tuck
A. Jungen
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
A. Geisberger
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
M. Ellis
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
G. Skidmore
Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081
Manuscript received January 27, 2004; revision received June 23, 2004. Review conducted by: A. Pelegri.
J. Eng. Mater. Technol. Jan 2005, 127(1): 90-96 (7 pages)
Published Online: February 22, 2005
Article history
Received:
January 27, 2004
Revised:
June 23, 2004
Online:
February 22, 2005
Citation
Tuck, K., Jungen , A., Geisberger , A., Ellis , M., and Skidmore, G. (February 22, 2005). "A Study of Creep in Polysilicon MEMS Devices ." ASME. J. Eng. Mater. Technol. January 2005; 127(1): 90–96. https://doi.org/10.1115/1.1839214
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